Samsung M393A4K40DB3-CWE g 32GB DDR4-3200MHz PC4-25600 ECC Registered CL22 288-Pin RDIMM Dual Rank 1.2V Server Memory

Manufacturer: Samsung

Mfr. Part#: M393A4K40DB3-CWE

Availability:In Stock

We accept Purchase Orders from Education Sector, Hospitals, Police, Councils and more.
Free Shipping Within US

$180.11

$211.89

You save $31.78

Exceptional speed, high reliability,low energy consumption

High-performing memory empowers faster, powerful solutions. Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy.

Infographic describing increased bandwidth of DDR4 when compared to DDR3; the bandwidth of DDR4 has been increased 2X, DDR3 - 1600Mbps, DDR4 - 3200Mbps

Less energy, greater efficiency

  • Advanced process technology
  • Reduce core and on/off power
  • Samsung’s industry-first 1x nm process technology enables DDR4 to consume less power while boosting performance, reducing TCO. The 1.2 V low operating voltage and Pseudo Open Drain (POD) interface enables lower power consumption, using 25% less energy.

    Improved reliability

  • Safe CRC transmission
  • Parity bit to prevent errors
  • System reliability is ever more critical as data centers process ever more traffic. Advanced features of the Samsung DDR4 ensure superior data transmission, including Write CRC to help recognize multibit failures and parity checks for CMD/ADD to prevent system malfunctions.

    Reviews

    Samsung M393A4K40DB3-CWE g 32GB DDR4-3200MHz PC4-25600 ECC Registered CL22 288-Pin RDIMM Dual Rank 1.2V Server Memory

    Price: $180.11

    Manufacturer: Samsung

    Mfr. Part#: M393A4K40DB3-CWE

    Estimated Ship: 24-48 hrs

    Exceptional speed, high reliability,low energy consumption

    High-performing memory empowers faster, powerful solutions. Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy.

    Infographic describing increased bandwidth of DDR4 when compared to DDR3; the bandwidth of DDR4 has been increased 2X, DDR3 - 1600Mbps, DDR4 - 3200Mbps

    Less energy, greater efficiency

  • Advanced process technology
  • Reduce core and on/off power
  • Samsung’s industry-first 1x nm process technology enables DDR4 to consume less power while boosting performance, reducing TCO. The 1.2 V low operating voltage and Pseudo Open Drain (POD) interface enables lower power consumption, using 25% less energy.

    Improved reliability

  • Safe CRC transmission
  • Parity bit to prevent errors
  • System reliability is ever more critical as data centers process ever more traffic. Advanced features of the Samsung DDR4 ensure superior data transmission, including Write CRC to help recognize multibit failures and parity checks for CMD/ADD to prevent system malfunctions.

    General Information